Energy Band Diagram
Valence and conduction bands split by E_g — tune T to see thermal excitation follow exp(−E_g/2kT).
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Complete revision notes and formulas for Semiconductor Electronics (Class 12). Curated for JEE, NEET, AP Physics, SAT, and CUET. Tap any topic to open the live simulation and full PYQ set.
Valence and conduction bands split by E_g — tune T to see thermal excitation follow exp(−E_g/2kT).
Notes coming soon — open the simulation for the live walkthrough.
Three-panel side-by-side band comparison with resistivity labels.
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Pure Si lattice — thermal breaking of covalent bonds creates e⁻/hole pairs (n=p=n_i).
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Doping with pentavalent P (extra e⁻) or trivalent B (extra hole) — toggle type live.
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Depletion region, built-in V_bi = 0.7 V — apply forward/reverse bias and see width change.
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Shockley: I = I_s(exp(V/V_T)−1) — knee at ~0.7 V Si; tiny reverse current.
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Single diode — V_out = max(0, V_in − 0.7) with live oscilloscope trace.
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Bridge of 4 diodes — V_out = |V_in| − 1.4 V with optional capacitor filter.
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I_C = β · I_B — tune V_BB through cutoff, active, and saturation regions.
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AND, OR, NOT, NAND, NOR, XOR — toggle A/B and watch output LED + truth table.
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Sharp reverse breakdown at V_z = 5.1 V — output clamps once V_in exceeds V_z.
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λ = 1240/E_g — 5 materials from GaAs (IR) to InGaN (violet) with photon emission.
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Semiconductor Electronics on sciphylab (also known as SciPhy, SciPhy Lab, SciPhy Labs). Free physics revision for Class 12, JEE Mains, JEE Advanced, NEET UG, AP Physics 1/2/C, SAT Subject Physics, and CUET-UG.