Semiconductor Electronics

Valence and conduction bands split by E_g — tune T to see thermal excitation follow exp(−E_g/2kT).

Three-panel side-by-side band comparison with resistivity labels.

Pure Si lattice — thermal breaking of covalent bonds creates e⁻/hole pairs (n=p=n_i).

Doping with pentavalent P (extra e⁻) or trivalent B (extra hole) — toggle type live.

Depletion region, built-in V_bi = 0.7 V — apply forward/reverse bias and see width change.

Shockley: I = I_s(exp(V/V_T)−1) — knee at ~0.7 V Si; tiny reverse current.

Single diode — V_out = max(0, V_in − 0.7) with live oscilloscope trace.

Bridge of 4 diodes — V_out = |V_in| − 1.4 V with optional capacitor filter.

I_C = β · I_B — tune V_BB through cutoff, active, and saturation regions.

AND, OR, NOT, NAND, NOR, XOR — toggle A/B and watch output LED + truth table.

Sharp reverse breakdown at V_z = 5.1 V — output clamps once V_in exceeds V_z.

λ = 1240/E_g — 5 materials from GaAs (IR) to InGaN (violet) with photon emission.